Top Gate Amorphous In−Ga−Zn−O Thin Film Transistors Fabricated on Soda−Lime−Silica Glass Substrates
نویسندگان
چکیده
This work presents a comparative analysis of top gate a-IGZO TFTs fabricated on both soda-lime-silica glass and alkali-free borosilicate glass. Low-temperature ALD is selected for the deposition of gate dielectric to minimize a thermal stress. Comparing with TFTs on alkali-free borosilicate glass, TFTs with soda-lime-glass show similar threshold voltage and subthreshold swing, but slightly degraded effective mobility, stability and uniformity. The results of atomic force measurements are provided to explain the uniformity degradation. Author
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